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| MBR2045CT SWITCHMODEt Power Rectifier Features and Benefits * * * * * * Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) Pb-Free Package is Available* http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS 1 2, 4 3 Applications * Power Supply - Output Rectification * Power Management * Instrumentation Mechanical Characteristics * * * * * * Case: Epoxy, Molded Epoxy Meets UL 94, V-0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C 1 2 3 MARKING DIAGRAM 4 TO-220AB CASE 221A STYLE 6 AYWW MBR2045CTG AKA A = Assembly Location Y = Year WW = Work Week MBR2045CT = Device Code G = Pb-Free Package AKA = Diode Polarity ORDERING INFORMATION Device MBR2045CT MBR2045CTG Package TO-220 TO-220 (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2007 April, 2007 - Rev. 6 1 Publication Order Number: MBR2045CT/D MBR2045CT MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Per Device Per Diode (TC = 165C) Peak Repetitive Forward Current per Diode Leg (Square Wave, 20 kHz, TC = 163C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) See Figure 11 Storage Temperature Range Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) Value 45 Unit V 20 10 20 150 1.0 -65 to +175 -65 to +175 10,000 A IFRM IFSM IRRM Tstg TJ dv/dt A A A C C V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction-to-Case (Min. Pad) Maximum Thermal Resistance, Junction-to-Ambient (Min. Pad) Symbol RqJC RqJA Max 2.0 60 Unit C/W ELECTRICAL CHARACTERISTICS Characteristic Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TJ = 125C) (iF = 20 Amps, TJ = 125C) (iF = 20 Amps, TJ = 25C) Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. Symbol vF Min - - - - - Typ 0.50 0.67 0.71 10.4 0.02 Max 0.57 0.72 0.84 mA 15 0.1 Unit V iR http://onsemi.com 2 MBR2045CT 100 70 50 30 20 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) TJ = 150C iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 70 50 30 20 TJ = 150C 125C 25C 10 7.0 5.0 125C 3.0 2.0 25C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 0.7 0.5 0.3 0.2 0.1 0.0 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 3 MBR2045CT 100 TJ = 150C IR , REVERSE CURRENT (mA) 125C 1.0 100C 0.1 0.01 25C IR , REVERSE CURRENT (mA) 10 10 1.0 100 TJ = 150C 125C 100C 75C 0.1 25C 0.01 0.001 0.0001 0 5.0 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (VOLTS) 0.001 0 5.0 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IFSM , PEAK HALF-WAVE CURRENT (AMPS) 200 18 16 14 12 10 8.0 6.0 4.0 2.0 0 140 145 150 155 160 165 170 175 180 SQUARE WAVE dc 100 70 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 NUMBER OF CYCLES AT 60 Hz TC, CASE TEMPERATURE (C) Figure 5. Maximum Surge Capability PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) Figure 6. Current Derating, Case I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 0 25 50 75 100 125 150 175 dc SQUARE WAVE dc RqJA = 16C/W (With TO-220 Heat Sink) RqJA = 60C/W (No Heat Sink) 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 TJ = 175C SQUARE WAVE dc 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 TA, AMBIENT TEMPERATURE (C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Current Derating, Ambient, Per Leg Figure 8. Forward Power Dissipation http://onsemi.com 4 MBR2045CT r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 tp 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.1 1.0 t, TIME (ms) Ppk t1 Ppk TIME DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. DTJL = Ppk * RqJL [D + (1 - D) * r(t1 + tp) + r(tp) - r(t1)] where: DTJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp, etc. 10 100 1000 Figure 9. Thermal Response HIGH FREQUENCY OPERATION 1000 900 800 C, CAPACITANCE (pF) 700 600 500 400 300 200 100 0 0 10 Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. TJ = 25C f = 1 MHz 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 10. Typical Capacitance +150 V, 10 mAdc 2.0 kW VCC 12 Vdc 12 V 100 2N2222 D.U.T. + 4.0 mF 2.0 ms 1.0 kHz CURRENT AMPLITUDE ADJUST 0-10 AMPS 2N6277 100 CARBON 1.0 CARBON 1N5817 Figure 11. Test Circuit for dv/dt and Reverse Surge Current http://onsemi.com 5 MBR2045CT PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE -T- B 4 SEATING PLANE F T C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 6: PIN 1. 2. 3. 4. SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MBR2045CT/D |
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